CW LASER ACTIVATED FLOW APPLIED TO THE PLANARIZATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURESDELFINO M; REIFSTECK TA.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 715-717; BIBL. 6 REF.Article

SUPPRESSING AL AUTODIFFUSION IN IMPLANTATION AMORPHIZED AND RECRYSTALLIZED SILICON ON SAPPHIRE FILMSREEDY RE; SIGMON TW; CHRISTEL LA et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 707-709; BIBL. 7 REF.Article

PLANAR INP/INGAAS-ADP WITH A GUARDRING FORMED BY CD DIFFUSION THROUGH SIO₂IKEDA M; WAKITA K; HATA S et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 61-62; BIBL. 7 REF.Article

PROTON AND DEUTERON BOMBARDED GA_0.47IN_0.53ASSTEEPLES K; DEARNALEY G; HARWELL AERE et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 703-705; BIBL. 7 REF.Article

A LONG-WAVE LENGTH, ANNULAR IN⁰,53)GA⁰,47)AS P-I-N PHOTODETECTIONFORREST SR; KOHL PA; PANOCK R et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 415-417; BIBL. 8 REF.Article

NEW CURRENT INJECTION 1.5 MU M WAVELENGTH GA_XAL_YIN_1-X-YAS/INP DOUBLE-HETEROSTRUCTURE LASER GROWN BY MOLECULAR BEAM EPITAXYTSANG WT; OLSSON NA.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 11; PP. 922-924; BIBL. 8 REF.Article

GA_0.47IN_0.53AS/AL_0.48IN_0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6 MU MALAVI K; PEARSALL TP; FORREST SR et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 227-229; BIBL. 11 REF.Article

PLASMA ANODISATION OF GA_1-XIN_XAS (X=0.35 AND 0.10) AND STUDY OF MOS INTERFACE PROPERTIESGOURRIER S; CHANE JP.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 4; PP. 156-157; BIBL. 6 REF.Article

OPTICAL COMPARATOR: A NEW APPLICATION FOR AVALANCHE PHOTOTRANSISTORSCAMPBELL JC; QUA GJ; DENTAI AG et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 408-411; BIBL. 10 REF.Article

CURRENT TRANSPORT IN AL/INALAS/INGAAS HETEROSTRUCTURESMORGAN DV; BOARD K; WOOD CEC et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. 251-260; ABS. GER; BIBL. 5 REF.Article

EFFECTS OF COMPOSITIONAL CLUSTERING ON ELECTRON TRANSPORT IN IN_0.53GA_0.47ASMARSH JH.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 8; PP. 732-734; BIBL. 9 REF.Article

PSEUDOPOTENTIAL BAND STRUCTURE OF AL_1-X-YGA_XIN_YASAYMERICH F.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 4; PP. 1968-1973; BIBL. 15 REF.Article

GA_0.47IN_O.53 AS METAL INSULATOR FIELD-EFFECT TRANSISTORS (MISFETS) FOR MICROWAVE FREQUENCY APPLICATIONSGARDNER PD; NAYAYAN SY; COLVIN S et al.1981; RCA REV.; ISSN 0033-6831; USA; DA. 1981; VOL. 42; NO 4; PP. 542-556; BIBL. 10 REF.Article

MN AS A P-TYPE DOPANT IN IN_0.53GA_0.47AS ON INP SUBSTRATESCHAND N; HOUSTON PA; ROBSON PN et al.1981; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 20; PP. 726-727; BIBL. 8 REF.Article

SMALL-AREA HIGH-SPEED INP/INGAAS PHOTOTRANSISTORCAMPBELL JC; BURRUS CA; DENTAI AG et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 820-821; BIBL. 14 REF.Article

LARGE-AREA AND VISIBLE RESPONSE VPE INGAAS PHOTODIODESWEBB PP; OLSEN GH.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 395-400; BIBL. 7 REF.Article

SURFACE CHEMICAL REACTIONS ON IN_0.53GA_0.47ASSTOCKER HJ; ASPNES DE.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 85-87; BIBL. 15 REF.Article

EXPERIMENTAL COMPARISON OF A GERMANIUM AVALANCHE PHOTODIODE AND INGAAS PINFET RECEIVER FOR LONGER WAVELENGTH OPTICAL COMMUNICATION SYSTEMSSMITH DR; HOOPER RL; SMYTH PP et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 11; PP. 453-454; BIBL. 6 REF.Article

ION-IMPLANTED IN⁰,53)GA⁰,47)AS/IN⁰,48)AS LATERAL PNP TRANSISTORSTABATABAIE ALAVI K; CHOUDHURY ANMM; ALAVI K et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 379-381; BIBL. 12 REF.Article

BE-IMPLANTED P-N JUNCTIONS IN GA_0.47IN_0.53ASVESCAN L; SELDERS J; KRAEUTLE H et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 12; PP. 533-534; BIBL. 9 REF.Article

IN⁰,53)GA⁰,47)AS CONTACT LAYER FOR 1,3 MU M LIGHT-EMITHING DIODESTEMKIN H; CHIN AK; DIGIUSEPPE MA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 19; PP. 703-705; BIBL. 8 REF.Article

MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR BEAM EPITAXIAL GROWN IN_0.52AL_0.48AS/IN_0.53GA_0.47AS, N-N HETEROJUNCTION BY C-V PROFILINGPEOPLE R; WECHT KW; ALAVI K et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 1; PP. 118-120; BIBL. 10 REF.Article

HETEROJUNCTION PHOTOTRANSISTORS FOR LONG-WAVELENGTH OPTICAL RECEIVERSCAMPBELL JC; OGAWA K.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1203-1208; BIBL. 28 REF.Article

IN_0.53 GA_0.47 AS FET'S WITH INSULATOR-ASSISTED SCHOTTKY GATESO'CONNOR P; PEARSALL TP; CHENG KY et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 3; PP. 64-66; BIBL. 16 REF.Article

CHARACTERIZATION OF DISORDERED BONDS IN SI-IMPLANTED GA_0.47IN_0.53AS WITH LASER RAMAN SPECTROSCOPYKAKIMOTO K; KATODA T.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 9; PP. 811-813; BIBL. 11 REF.Article